发明授权
- 专利标题: Plasma treatment between deposition processes
- 专利标题(中): 沉积工艺之间的等离子体处理
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申请号: US12263253申请日: 2008-10-31
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公开(公告)号: US07741144B2公开(公告)日: 2010-06-22
- 发明人: Soo Young Choi , Yong-Kee Chae , Shuran Sheng , Liwei Li
- 申请人: Soo Young Choi , Yong-Kee Chae , Shuran Sheng , Liwei Li
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: H01L27/142
- IPC分类号: H01L27/142
摘要:
Embodiments of the present invention include an improved method of forming a thin film solar cell device using a plasma processing treatment between two or more deposition steps. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction solar cell devices.
公开/授权文献
- US20090142878A1 PLASMA TREATMENT BETWEEN DEPOSITION PROCESSES 公开/授权日:2009-06-04