发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing the same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US12246099申请日: 2008-10-06
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公开(公告)号: US07741649B2公开(公告)日: 2010-06-22
- 发明人: Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
- 申请人: Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2004-263741 20040910
- 主分类号: H01L29/207
- IPC分类号: H01L29/207
摘要:
In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.
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