发明授权
US07741660B2 Pixel and imager device having high-k dielectrics in isolation structures
有权
在隔离结构中具有高k电介质的像素和成像器件
- 专利标题: Pixel and imager device having high-k dielectrics in isolation structures
- 专利标题(中): 在隔离结构中具有高k电介质的像素和成像器件
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申请号: US11636564申请日: 2006-12-11
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公开(公告)号: US07741660B2公开(公告)日: 2010-06-22
- 发明人: Chandra Mouli
- 申请人: Chandra Mouli
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dickstein Shapiro LLP
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H01L29/768
摘要:
An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photodiode. By creating a substrate region surrounding the charge-collection region of the photodiode, the photodiode may be electrically isolated from the bulk substrate. This region fixes the depletion region so that it does not migrate toward the surface of the substrate or the STI region. By doing so, the region prevents charge from being depleted from the substrate and the accumulation region, reducing dark current.
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