发明授权
- 专利标题： Dielectric film capacitor and method of manufacturing the same
- 专利标题（中）： 介电薄膜电容器及其制造方法
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申请号： US11508204申请日： 2006-08-23
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公开(公告)号： US07742277B2公开(公告)日： 2010-06-22
- 发明人: Tomotaka Shinoda , Kinji Yamada , Takahiro Kitano , Yoshiki Yamanishi , Muneo Harada , Tatsuzo Kawaguchi , Yoshihiro Hirota , Katsuya Okumura , Shuichi Kawano
- 申请人： Tomotaka Shinoda , Kinji Yamada , Takahiro Kitano , Yoshiki Yamanishi , Muneo Harada , Tatsuzo Kawaguchi , Yoshihiro Hirota , Katsuya Okumura , Shuichi Kawano
- 申请人地址： JP Ogaki-shi
- 专利权人： Ibiden Company Limited
- 当前专利权人： Ibiden Company Limited
- 当前专利权人地址： JP Ogaki-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-242472 20050824; JP2005-242473 20050824
- 主分类号： H01G4/06
- IPC分类号： H01G4/06 ; H01G4/005
摘要：
A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.
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