发明授权
- 专利标题: Read reference technique with current degradation protection
- 专利标题(中): 阅读参考技术与当前的降解保护
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申请号: US12048683申请日: 2008-03-14
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公开(公告)号: US07742340B2公开(公告)日: 2010-06-22
- 发明人: Fuchen Mu , Marco A. Cabassi , Ronald J. Syzdek
- 申请人: Fuchen Mu , Marco A. Cabassi , Ronald J. Syzdek
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A set of reference cells is used for sensing the data values stored at bit cells of a memory device. In response to an event, the reference cell providing the highest output of the set is selected as the reference cell to be used for subsequent memory access operations. The remaining reference cells are disabled so that they can recover back to or near their original non-degraded states. At each successive event, the set of reference cells can be reassessed to identify the reference cell that provides the highest output at that time and the memory device can be reconfigured to utilize the reference cell so identified. By utilizing the reference cell having the highest output to provide the read reference and disabling the remaining reference cells, the likelihood of the read reference falling below a minimum threshold can be reduced.
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