发明授权
- 专利标题： Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
- 专利标题（中）： 电子束装置及使用该装置制造半导体器件的方法
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申请号： US11819026申请日： 2007-06-25
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公开(公告)号： US07745784B2公开(公告)日： 2010-06-29
- 发明人: Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mitsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
- 申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mitsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
- 申请人地址： JP Tokyo
- 专利权人： Ebara Corporation
- 当前专利权人： Ebara Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2000-335833 20001102; JP2000-336305 20001102; JP2000-337370 20001106; JP2000-337491 20001106; JP2000-350935 20001117; JP2000-352720 20001120; JP2000-353831 20001121; JP2000-355294 20001122; JP2000-362752 20001129; JP2000-364556 20001130; JP2001-5140 20010112; JP2001-31901 20010208; JP2001-31906 20010208; JP2001-33599 20010209; JP2001-106656 20010405; JP2001-134981 20010502; JP2001-158571 20010528
- 主分类号： H01J37/26
- IPC分类号： H01J37/26
摘要：
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
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