发明授权
- 专利标题： Semiconductor device and fabrication method thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12230954申请日： 2008-09-09
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公开(公告)号： US07745829B2公开(公告)日： 2010-06-29
- 发明人: Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
- 申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
- 申请人地址： unknown Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd
- 当前专利权人地址： unknown Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP11-045558 19990223
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
公开/授权文献
- US20090014724A1 Semiconductor Device and Fabrication Method Thereof 公开/授权日：2009-01-15
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