Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.