发明授权
- 专利标题： Magnetic transistor structure
- 专利标题（中）： 磁晶体管结构
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申请号： US11539284申请日： 2006-10-06
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公开(公告)号： US07745893B2公开(公告)日： 2010-06-29
- 发明人: James Chyi Lai , Tom Allen Agan
- 申请人： James Chyi Lai , Tom Allen Agan
- 申请人地址： US MI St. Paul
- 专利权人： Northern Lights Semiconductor Corp.
- 当前专利权人： Northern Lights Semiconductor Corp.
- 当前专利权人地址： US MI St. Paul
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on one end of an opposite surface to the conductive section of the first magnetic section. The second metal terminal is disposed on one end approximately diagonal to the first metal terminal on an opposite surface to the conductive section of the second magnetic section. While the magnetic transistor structure is turned on, a current flows through the first magnetic section and the second magnetic section via the conductive section.
公开/授权文献
- US20070152254A1 Magnetic Transistor Structure 公开/授权日：2007-07-05
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