发明授权
- 专利标题： CMOS twin cell non-volatile random access memory
- 专利标题（中）： CMOS双胞晶非易失性随机存取存储器
-
申请号： US12042266申请日： 2008-03-04
-
公开(公告)号： US07746696B1公开(公告)日： 2010-06-29
- 发明人: Sunhom Paak
- 申请人： Sunhom Paak
- 申请人地址： US CA San Jose
- 专利权人： XILINX, Inc.
- 当前专利权人： XILINX, Inc.
- 当前专利权人地址： US CA San Jose
- 代理商 Scott Hewett
- 主分类号： G11C14/00
- IPC分类号： G11C14/00 ; G11C11/34
摘要：
A memory has first and second storage cells, each with a floating node, that store complementary data values. Interlaced inverters quickly sense a voltage difference between the storage cells and provide a data value output when the memory is read. Each floating node includes a tunneling gate of a tunneling transistor, a gate of a bitline transistor, and a plate of a coupling capacitor.
信息查询
