There is provided a semiconductor bridge device wherein a reaction time for generating sparks is short and a spark generating amount is large. This semiconductor bridge device comprises a substrate, a pair of land portions, a bridge portion electrically connecting between the pair of the land portions, and an electrode pad arranged on each upper surface in the pair of the land portions and emitting sparks at the bridge portion through an electric current passed between the electrode pads, in which the pair of the land portions and the bridge portion consist of a laminate formed by alternately laminating a metal layer and a metal oxide layer plural times, and an outermost layer in the laminate is a metal layer, and a metal oxide having a decomposition temperature of higher than 1500° C. is used in the metal oxide layer.