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发明授权
US07749876B2 Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权
一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，该半导体部件包括掩埋停止区域

Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
摘要：
According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要（中）：

根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。

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