发明授权
US07749892B2 Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
失效
嵌入式纳米UV阻挡和扩散屏障，提高铜/超低K层间电介质电子器件的可靠性
- 专利标题： Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
- 专利标题（中）： 嵌入式纳米UV阻挡和扩散屏障，提高铜/超低K层间电介质电子器件的可靠性
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申请号： US11564358申请日： 2006-11-29
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公开(公告)号： US07749892B2公开(公告)日： 2010-07-06
- 发明人: Griselda Bonilla , Christos D. Dimitrakopoulos , Son V. Nguyen , Alfred Grill , Satyanarayana V. Nitta , Darryl D. Restaino , Terry A. Spooner
- 申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Son V. Nguyen , Alfred Grill , Satyanarayana V. Nitta , Darryl D. Restaino , Terry A. Spooner
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Graham S. Jones; H. Daniel Schnurmann
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
An interconnect in provided which comprises a copper conductor having both a top surface and a lower surface, with caps formed on the top surface of the metallic conductor. The cap is formed of dual laminations or multiple laminations of films with the laminated films including an Ultra-Violet (UV) blocking film and a diffusion barrier film. The diffusion barrier film and the UV blocking film may be separated by an intermediate film.
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