发明授权
- 专利标题： Silicide interconnect structure
- 专利标题（中）： 硅化物互连结构
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申请号： US12145163申请日： 2008-06-24
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公开(公告)号： US07749898B2公开(公告)日： 2010-07-06
- 发明人: Paul R. Besser , Christian Lavoie , Cyril Cabral, Jr. , Stephen M. Rossnagel , Kenneth P. Rodbell
- 申请人： Paul R. Besser , Christian Lavoie , Cyril Cabral, Jr. , Stephen M. Rossnagel , Kenneth P. Rodbell
- 申请人地址： KY Grand Cayman
- 专利权人： Globalfoundries Inc.
- 当前专利权人： Globalfoundries Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 主分类号： H01L21/477
- IPC分类号： H01L21/477
摘要：
A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide is formed in the opening to define the interconnect structure. A semiconductor device includes a first layer having a conductive region defined therein, a dielectric layer formed above the first layer, and a metal silicide interconnect structure extending through the dielectric layer to communicate with the conductive region.
公开/授权文献
- US20090315182A1 SILICIDE INTERCONNECT STRUCTURE 公开/授权日：2009-12-24