发明授权
US07750370B2 High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
有权
在保护电介质层上具有自对准微型场缓和板的高电子迁移率晶体管
- 专利标题： High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
- 专利标题（中）： 在保护电介质层上具有自对准微型场缓和板的高电子迁移率晶体管
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申请号： US12003098申请日： 2007-12-20
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公开(公告)号： US07750370B2公开(公告)日： 2010-07-06
- 发明人: Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
- 申请人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
- 申请人地址： US CA Los Angeles
- 专利权人： Northrop Grumman Space & Mission Systems Corp.
- 当前专利权人： Northrop Grumman Space & Mission Systems Corp.
- 当前专利权人地址： US CA Los Angeles
- 代理机构： Posz Law Group, PLC
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/338
摘要：
A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
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