发明授权
- 专利标题： Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors
- 专利标题（中）： 垂直结场效应晶体管，以及垂直结型场效应晶体管的制造方法
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申请号： US11770414申请日： 2007-06-28
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公开(公告)号： US07750377B2公开(公告)日： 2010-07-06
- 发明人: Takashi Hoshino , Shin Harada , Kazuhiro Fujikawa , Satoshi Hatsukawa , Kenichi Hirotsu
- 申请人： Takashi Hoshino , Shin Harada , Kazuhiro Fujikawa , Satoshi Hatsukawa , Kenichi Hirotsu
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Fish & Richardson P.C.
- 优先权： JPP2002-215804 20020724; JPP2002-235045 20020812
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A vertical JFET 1a according to the present invention has an n+ type drain semiconductor portion 2, an n-type drift semiconductor portion 3, a p+ type gate semiconductor portion 4, an n-type channel semiconductor portion 5, an n+ type source semiconductor portion 7, and a p+ type gate semiconductor portion 8. The n-type drift semiconductor portion 3 is placed on a principal surface of the n+ type drain semiconductor portion 2 and has first to fourth regions 3a to 3d extending in a direction intersecting with the principal surface. The p+ type gate semiconductor portion 4 is placed on the first to third regions 3a to 3c of the n-type drift semiconductor portion 3. The n-type channel semiconductor portion 5 is placed along the p+ type gate semiconductor portion 4 and is electrically connected to the fourth region 3d of the n-type drift semiconductor portion 3.
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