发明授权
US07750386B2 Memory cells including nanoporous layers containing conductive material
失效
记忆单元包括含有导电材料的纳米多孔层
- 专利标题： Memory cells including nanoporous layers containing conductive material
- 专利标题（中）： 记忆单元包括含有导电材料的纳米多孔层
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申请号： US12269507申请日： 2008-11-12
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公开(公告)号： US07750386B2公开(公告)日： 2010-07-06
- 发明人: Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
- 申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Campbell Nelson Whipps LLC
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/8242
摘要：
A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
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