Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US11723029Application Date: 2007-03-16
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Publication No.: US07750391B2Publication Date: 2010-07-06
- Inventor: Yoshio Ozawa
- Applicant: Yoshio Ozawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-097538 20060331; JP2006-299202 20061102
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor device including a semiconductor substrate, a tunnel insulation film provided on the surface of the semiconductor substrate, charge trap states at which an electron potential energy is higher than a Fermi level of the semiconductor substrate being provided at part of the tunnel insulation film at least in the vicinity of an interface with the semiconductor substrate, and at least one charge storage layer being provided on the tunnel insulation film, charges supplied from the semiconductor substrate via the tunnel insulation film being accumulated in the charge storage layer.
Public/Granted literature
- US20070228447A1 Semiconductor device and method for manufacturing the same Public/Granted day:2007-10-04
Information query
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