发明授权
- 专利标题： Self-aligned and extended inter-well isolation structure
- 专利标题（中）： 自对准和扩展的井间隔离结构
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申请号： US11748521申请日： 2007-05-15
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公开(公告)号： US07750429B2公开(公告)日： 2010-07-06
- 发明人: Thomas W. Dyer , Zhijiong Luo , Haining S. Yang
- 申请人： Thomas W. Dyer , Zhijiong Luo , Haining S. Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A pedestal is formed out of the pad layer such that two edges of the pedestal coincide with a border of the wells as implanted. An extended pedestal is formed over the pedestal by depositing a conformal dielectric layer. The area of the extended pedestal is exposed the semiconductor surface below is recessed to a recess depth. Other trenches including at least one intra-well isolation trench are lithographically patterned. After a reactive ion etch, both an inter-well isolation trench and at least one intra-well isolation trench are formed. The width of the inter-well isolation trench may be reduced due to the deeper bottom surface compared to the prior art structures. The boundary between the p-well and the n-well below the inter-well isolation structure is self-aligned to the middle of the inter-well isolation structure.
公开/授权文献
- US20080283962A1 SELF-ALIGNED AND EXTENDED INTER-WELL ISOLATION STRUCTURE 公开/授权日：2008-11-20
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