发明授权
US07750627B2 Magnetic film sensor having a magnetic film for generating a magnetostriction and a depressed insulating layer
有权
具有用于产生磁致伸缩的磁性膜和凹陷绝缘层的磁性膜传感器
- 专利标题： Magnetic film sensor having a magnetic film for generating a magnetostriction and a depressed insulating layer
- 专利标题（中）： 具有用于产生磁致伸缩的磁性膜和凹陷绝缘层的磁性膜传感器
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申请号： US11585117申请日： 2006-10-24
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公开(公告)号： US07750627B2公开(公告)日： 2010-07-06
- 发明人: Yoshitaka Sasaki , Koji Shimazawa , Tatsushi Shimizu
- 申请人： Yoshitaka Sasaki , Koji Shimazawa , Tatsushi Shimizu
- 申请人地址： US CA Milpitas CN Hong Kong JP Saku-shi
- 专利权人： Headway Technologies, Inc.,SAE Magnetics (H.K.) Ltd.,Koji Shimazawa
- 当前专利权人： Headway Technologies, Inc.,SAE Magnetics (H.K.) Ltd.,Koji Shimazawa
- 当前专利权人地址： US CA Milpitas CN Hong Kong JP Saku-shi
- 代理机构： Oliff & Berridge, PLC
- 主分类号： G01R33/02
- IPC分类号： G01R33/02
摘要：
A magnetic film sensor comprises a magnetic film for generating a magnetostriction, and a magnetostrictive structure for generating a magnetostriction in the magnetic film. The magnetostrictive structure is constructed so as to generate a magnetostriction by curving the magnetic film, for example. The magnetostrictive structure is obtained, for example, by providing a depressed insulating layer having a surface formed with a depression and forming the magnetic film across the depression.
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