发明授权
- 专利标题: Level shifter using coupling phenomenon
- 专利标题(中): 电平移位器使用耦合现象
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申请号: US12291259申请日: 2008-11-07
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公开(公告)号: US07750718B2公开(公告)日: 2010-07-06
- 发明人: Saeng Hwan Kim
- 申请人: Saeng Hwan Kim
- 申请人地址: KR Icheon-si
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: Cooper & Dunham LLP
- 代理商 John P. White
- 优先权: KR10-2008-0037410 20080422
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A level shifter removes delay, which is generated at the time of transition of an input signal level, by adjusting a size of NMOS transistors to perform pull-down and pull-up operations. The level shifter includes a coupling unit for setting up a voltage level of a first node according to a voltage level of an input signal, a first buffer for transferring an output signal by buffering a signal from the first node, and a driving unit configured to receive the input signal and the output signal and drive the first node.
公开/授权文献
- US20090261884A1 Level shifter using coupling phenomenon 公开/授权日:2009-10-22
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