发明授权
- 专利标题: Charge pump circuit and nonvolatile memory
- 专利标题(中): 电荷泵电路和非易失性存储器
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申请号: US12156903申请日: 2008-06-04
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公开(公告)号: US07750722B2公开(公告)日: 2010-07-06
- 发明人: Nan Kawashima
- 申请人: Nan Kawashima
- 申请人地址: JP
- 专利权人: Seiko Instruments Inc.
- 当前专利权人: Seiko Instruments Inc.
- 当前专利权人地址: JP
- 代理机构: Adams & Wilks
- 优先权: JP2007-152328 20070608
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A charge pump circuit has an input voltage generating circuit and a voltage step-up circuit. The input voltage generating circuit has a constant current circuit that generates a constant current, a charge transfer correction device that generates a correction voltage based on the constant current, a constant voltage circuit that generates a constant voltage, and a buffer amplifier that outputs an input voltage obtained by adding the correction voltage to the constant voltage. The voltage step-up circuit has charge transfer devices, capacitors and a clock driver. The charge transfer devices are connected in series to an output terminal of the buffer amplifier and are made of the same element as and have substantially the same characteristic as that of the charge transfer correction device. Each of the capacitors has one end connected to each connection point of each of the plurality of charge transfer devices. The clock driver uses the input voltage as a power supply voltage, generates clock pulses having opposite phases based on the power supply voltage, and alternately supplies the clock pulses to another end of each of the plurality of capacitors.
公开/授权文献
- US20080303585A1 Charge pump circuit and nonvolatile memory 公开/授权日:2008-12-11
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