发明授权
US07751156B2 Dual-layer free layer in a tunneling magnetoresistance (TMR) element
有权
隧道磁阻（TMR）元件中的双层自由层
- 专利标题： Dual-layer free layer in a tunneling magnetoresistance (TMR) element
- 专利标题（中）： 隧道磁阻（TMR）元件中的双层自由层
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申请号： US11536891申请日： 2006-09-29
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公开(公告)号： US07751156B2公开(公告)日： 2010-07-06
- 发明人: Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
- 申请人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
- 申请人地址： NL Amsterdam
- 专利权人： Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人： Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人地址： NL Amsterdam
- 代理机构： Duft Bornsen & Fishman, LLP
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.
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