发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US12267878申请日: 2008-11-10
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公开(公告)号: US07751222B2公开(公告)日: 2010-07-06
- 发明人: Tadashi Nitta
- 申请人: Tadashi Nitta
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2005-363052 20051216
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C7/02 ; G11C11/34
摘要:
A basic cell comprises a memory cell capable of retaining data having at least a binary value, a first selecting transistor connected between a first terminal of the memory cell and the Mth bit line, and a second selecting transistor connected between the first terminal of the memory cell and the M+1th bit line. A gate of the first selecting transistor is connected to the 2·N−1th selecting line, and a gate of the second selecting transistor is connected to the 2·Nth selecting line.
公开/授权文献
- US20090080231A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2009-03-26
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