发明授权
- 专利标题: Method for manufacturing a sputtering target
- 专利标题(中): 溅射靶的制造方法
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申请号: US11892755申请日: 2007-08-27
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公开(公告)号: US07754027B2公开(公告)日: 2010-07-13
- 发明人: Rong-Zhi Chen , Jye-Long Lee , In-Ting Hong , Jui-Tung Chang , Pa-Tsui Sze
- 申请人: Rong-Zhi Chen , Jye-Long Lee , In-Ting Hong , Jui-Tung Chang , Pa-Tsui Sze
- 申请人地址: TW Kaohsiung
- 专利权人: China Steel Corporation
- 当前专利权人: China Steel Corporation
- 当前专利权人地址: TW Kaohsiung
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 主分类号: H01F1/01
- IPC分类号: H01F1/01
摘要:
A method for manufacturing a sputtering target includes the steps of: providing a highly pure matrix material containing a magnetic metal, and a highly pure precious metal ingot material; cleaning the surfaces of the matrix material and the precious metal ingot; vacuum melting the matrix material and the precious metal ingot to obtain a molten alloy; pouring the molten alloy in a mold having a cooling system while maintaining a surface of the molten alloy at a molten state by arc heating until the pouring is finished, thereby forming the molten alloy into a cast blank; hot working the cast blank; and annealing the cast blank after the hot working.
公开/授权文献
- US20090056840A1 Method for manufacturing a sputtering target 公开/授权日:2009-03-05