发明授权
US07754396B2 Mask with focus measurement pattern and method for measuring focus value in exposure process using the same 有权
具有聚焦测量图案的掩模和用于在曝光过程中测量聚焦值的方法

  • 专利标题: Mask with focus measurement pattern and method for measuring focus value in exposure process using the same
  • 专利标题(中): 具有聚焦测量图案的掩模和用于在曝光过程中测量聚焦值的方法
  • 申请号: US11758502
    申请日: 2007-06-05
  • 公开(公告)号: US07754396B2
    公开(公告)日: 2010-07-13
  • 发明人: Jong Kyun Hong
  • 申请人: Jong Kyun Hong
  • 申请人地址: KR Icheon-si
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Icheon-si
  • 代理机构: Marshall, Gerstein & Borun LLP
  • 优先权: KR10-2006-0137140 20061228
  • 主分类号: G03F1/00
  • IPC分类号: G03F1/00
Mask with focus measurement pattern and method for measuring focus value in exposure process using the same
摘要:
A mask with a focus measurement pattern and a method for measuring a focus value in an exposure process using the same that are capable of improving the measurement of a focus change, wherein the mask includes an outer reference pattern which provides a position reference for focus measurement, and focus measurement patterns which are provided apart from the outer reference pattern and formed in a line shape extending in two different directions. Accordingly, the focus change caused in the exposure process can be measured by measuring the line shortening of the focus measurement patterns.
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