发明授权
- 专利标题： Method for manufacturing a three-dimensional semiconductor device and a wafer used therein
- 专利标题（中）： 制造其中使用的三维半导体器件和晶片的方法
-
申请号： US11956560申请日： 2007-12-14
-
公开(公告)号： US07754581B2公开(公告)日： 2010-07-13
- 发明人: Hiroaki Ikeda , Masakazu Ishino , Hiroyuki Tenmei , Naoya Kanda , Yasuhiro Naka , Kunihiko Nishi
- 申请人： Hiroaki Ikeda , Masakazu Ishino , Hiroyuki Tenmei , Naoya Kanda , Yasuhiro Naka , Kunihiko Nishi
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2006-337835 20061215
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
A method for manufacturing a semiconductor device includes the steps of forming first and second semiconductor wafers each including an array of chips and elongate electrodes, forming a groove on scribe lines separating the chips from one another; coating a surface of one of the semiconductor wafers with adhesive; bonding together the semiconductor wafers while allowing the groove to receive therein excessive adhesive; and heating the wafers to connect the elongate electrodes of both the semiconductor wafers.
公开/授权文献
信息查询
IPC分类:
