发明授权
US07755059B2 Systems, methods and apparatus for reduction of field-effect transistor leakage in a digital X-ray detector
有权
用于在数字X射线检测器中减小场效应晶体管泄漏的系统，方法和装置
- 专利标题： Systems, methods and apparatus for reduction of field-effect transistor leakage in a digital X-ray detector
- 专利标题（中）： 用于在数字X射线检测器中减小场效应晶体管泄漏的系统，方法和装置
-
申请号： US12264461申请日： 2008-11-04
-
公开(公告)号： US07755059B2公开(公告)日： 2010-07-13
- 发明人: James Zhengshe Liu , Ping Xue , Ching-Yeu Wei , Donald Langler , Fengchao Zhang
- 申请人： James Zhengshe Liu , Ping Xue , Ching-Yeu Wei , Donald Langler , Fengchao Zhang
- 申请人地址： US NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Schenectady
- 代理商 Peter Vogel, Esq.; William Baxter, Esq.; Michael G. Smith, Esq.
- 主分类号： G01T1/24
- IPC分类号： G01T1/24
摘要：
Systems, methods and apparatus are provided through which in some implementations field-effect-transistor (FET) leakage from a pixel array panel of a digital X-ray detector is reduced by acquiring an image and an offset image from the pixel array panel of the digital X-ray detector while a negative voltage of the pixel array panel is at a higher level than a negative voltage of a threshold state of the pixel array panel of the digital X-ray detector.
公开/授权文献
信息查询
