Invention Grant
US07755059B2 Systems, methods and apparatus for reduction of field-effect transistor leakage in a digital X-ray detector
有权
用于在数字X射线检测器中减小场效应晶体管泄漏的系统，方法和装置
- Patent Title: Systems, methods and apparatus for reduction of field-effect transistor leakage in a digital X-ray detector
- Patent Title (中): 用于在数字X射线检测器中减小场效应晶体管泄漏的系统，方法和装置
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Application No.: US12264461Application Date: 2008-11-04
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Publication No.: US07755059B2Publication Date: 2010-07-13
- Inventor: James Zhengshe Liu , Ping Xue , Ching-Yeu Wei , Donald Langler , Fengchao Zhang
- Applicant: James Zhengshe Liu , Ping Xue , Ching-Yeu Wei , Donald Langler , Fengchao Zhang
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agent Peter Vogel, Esq.; William Baxter, Esq.; Michael G. Smith, Esq.
- Main IPC: G01T1/24
- IPC: G01T1/24
Abstract:
Systems, methods and apparatus are provided through which in some implementations field-effect-transistor (FET) leakage from a pixel array panel of a digital X-ray detector is reduced by acquiring an image and an offset image from the pixel array panel of the digital X-ray detector while a negative voltage of the pixel array panel is at a higher level than a negative voltage of a threshold state of the pixel array panel of the digital X-ray detector.
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