发明授权
- 专利标题: Bandgap engineered MOS-gated power transistors
- 专利标题(中): 带隙工程MOS门控功率晶体管
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申请号: US11245995申请日: 2005-10-07
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公开(公告)号: US07755137B2公开(公告)日: 2010-07-13
- 发明人: Gary Dolny , Qi Wang
- 申请人: Gary Dolny , Qi Wang
- 申请人地址: US ME So. Portland
- 专利权人: Fairchild Semiconductor Corporation
- 当前专利权人: Fairchild Semiconductor Corporation
- 当前专利权人地址: US ME So. Portland
- 代理机构: Townsend and Townsend and Crew LLP
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
Devices, methods, and processes that improve immunity to transient voltages and reduce parasitic impedances. Immunity to unclamped inductive switching events is improved. For example, a trench-gated power MOSFET device having a SiGe source is provided, where the SiGe source reduces parasitic npn transistor gain by reducing hole current in the body or well region, thereby decreasing the likelihood of a latch-up condition. A body tie on this device can also be eliminated to reduce transistor cell size. A trench-gated power MOSFET device having a SiGe body or well region is also provided. A SiGe body reduces hole current when the body diode is turned on, thereby reducing reverse recovery power losses. Device characteristics are also improved. For example, parasitic gate impedance is reduced through the use of a poly SiGe gate, and channel resistance is reduced through the use of a SiGe layer near the device's gate.
公开/授权文献
- US20060118863A1 Bandgap engineered MOS-gated power transistors 公开/授权日:2006-06-08