发明授权
- 专利标题: 3-D SRAM array to improve stability and performance
- 专利标题(中): 3-D SRAM阵列,以提高稳定性和性能
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申请号: US11867877申请日: 2007-10-05
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公开(公告)号: US07755926B2公开(公告)日: 2010-07-13
- 发明人: Yue Tan , Huilong Zhu
- 申请人: Yue Tan , Huilong Zhu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Whitham, Curtis, Christofferson & Cook, P.C.
- 代理商 Yuanmin Cai
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A design structure for a three-dimensional memory circuit provides reduction in memory cell instability due to half-select operation by reduction of the number of memory cells sharing a sense amplifier and, potentially, avoidance of half-select operation by placing some or all peripheral circuits including local evaluation circuits functioning as a type of sense amplifier on an additional chips or chips overlying the memory array. Freedom of placement of such peripheral circuits is provided with minimal increase in connection length since word line decoders may be placed is general registration with any location along the word lines while local evaluation circuits and/or sense amplifiers can be placed at any location generally in registration with the bit line(s) to which they correspond.
公开/授权文献
- US20080310207A1 3-D SRAM ARRAY TO IMPROVE STABILITY AND PERFORMANCE 公开/授权日:2008-12-18