A semiconductor laser device (5) comprising at least one semiconductor laser chip (7) is provided, wherein the semiconductor laser chip (7) contains an active layer that emits electromagnetic radiation. Further, at least one corner reflector (1) is formed in the semiconductor laser chip (7). The corner reflector (1) has a first and a second reflective surface (14, 15), wherein the first and the second reflective surface (14, 15) are arranged at an angle of less than 90 degrees with respect to one another. This results in an improved emission characteristic of the radiation emitted by the semiconductor laser device (5).