发明授权
US07759928B2 Semiconductor device including an internal voltage generation circuit and a first test circuit
失效
包括内部电压产生电路和第一测试电路的半导体器件
- 专利标题: Semiconductor device including an internal voltage generation circuit and a first test circuit
- 专利标题(中): 包括内部电压产生电路和第一测试电路的半导体器件
-
申请号: US11937056申请日: 2007-11-08
-
公开(公告)号: US07759928B2公开(公告)日: 2010-07-20
- 发明人: Ryu Ogiwara , Daisaburo Takashima
- 申请人: Ryu Ogiwara , Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2006-304445 20061109
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
According to an aspect of the invention, there is provided, a semiconductor device, including an internal voltage generation circuit generating a prescribed voltage, a first test circuit connecting to a voltage-supplying wiring, one end of the voltage-supplying wiring being connected to a source wiring and the other end of the voltage-supplying wiring being connected to the internal voltage generation circuit, the first test circuit being supplied an outer voltage from the source wiring and a voltage of the internal voltage generation circuit through the voltage-supplying wiring, the first test circuit generating a prescribed resistance value on a basis of a control input from an outer portion in a test mode.
公开/授权文献
- US20080111575A1 SEMICONDUCTOR DEVICE 公开/授权日:2008-05-15
信息查询