发明授权
- 专利标题： Power-down circuit with self-biased compensation circuit
- 专利标题（中）： 具有自偏置补偿电路的掉电电路
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申请号： US12328305申请日： 2008-12-04
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公开(公告)号： US07760009B2公开(公告)日： 2010-07-20
- 发明人: Ping-Lin Yang , Hsin-Hsin Ko , Chung-Cheng Chou
- 申请人： Ping-Lin Yang , Hsin-Hsin Ko , Chung-Cheng Chou
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H03K3/01
- IPC分类号： H03K3/01
摘要：
A circuit includes a first power supply node at a first power supply voltage; a gated-node; and a first control device coupled between the first power supply node and the gated-node. The first control device is configured to pass the first power supply voltage to the gated-node or to disconnect the gated-node from the first power supply voltage. A second control device is coupled between the first power supply node and the gated-node. The second control device is configured to pass a gated-voltage to the gated-node or disconnect the gated-node from the gated-voltage. A voltage-drop device is coupled between the first power supply node and the gated-node, wherein the voltage-drop device is serially connected with the second control device. A negative-feedback current source is connected in parallel with the voltage-drop device. The negative-feedback current source is configured to provide a current tracking a variation of the gated-voltage at the gated-node.
公开/授权文献
- US20100141330A1 POWER-DOWN CIRCUIT WITH SELF-BIASED COMPENSATION CIRCUIT 公开/授权日：2010-06-10
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