发明授权
- 专利标题: Semiconductor device stress modeling methodology
- 专利标题(中): 半导体器件应力模拟方法
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申请号: US11673824申请日: 2007-02-12
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公开(公告)号: US07761278B2公开(公告)日: 2010-07-20
- 发明人: Dureseti Chidambarrao , Richard Q. Williams
- 申请人: Dureseti Chidambarrao , Richard Q. Williams
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A computational methodology that improves the accuracy of model parameters in a compact model uses methods and algorithms to self-consistently match independently developed base and stress models by re-fitting the stress model to the data set that generates the base model. The re-fitting algorithm removes any discrepancy between the base model and the stress model as the stress model is applied to the data set obtained from a dimension-scaling macro. Stress offsets for dimension-scaling macro devices are calculated to fit the measured values of the model parameters for the same devices. The process of fitting the model parameters to the data set from the dimension-scaling macro calculates constant, linear, and quadratic coefficients for the model parameters, which are employed to increase the accuracy of the model parameters and of the compact model used in circuit simulations and optimization.
公开/授权文献
- US20080195983A1 SEMICONDUCTOR DEVICE STRESS MODELING METHODOLOGY 公开/授权日:2008-08-14
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