发明授权
- 专利标题： Wafer and wafer cutting and dividing method
- 专利标题（中）： 晶圆和晶圆切割分割方法
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申请号： US11598651申请日： 2006-11-14
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公开(公告)号： US07763526B2公开(公告)日： 2010-07-27
- 发明人: Muneo Tamura , Hiromi Ooniwa
- 申请人： Muneo Tamura , Hiromi Ooniwa
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2005-331205 20051116; JP2006-276653 20061010
- 主分类号： H01L21/301
- IPC分类号： H01L21/301
摘要：
A laser beam is applied to an interior of a wafer through a top surface to form modified areas in a plurality of layers of modified area groups. Intervals of the modified areas in one of the layers of modified area groups differ from intervals of the modified areas in another one of the layers of the modified area groups, which is closer to the top surface of the wafer in comparison to the one of the layers of the modified area groups.
公开/授权文献
- US20070111481A1 Wafer and wafer cutting and dividing method 公开/授权日：2007-05-17
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