Invention Grant
- Patent Title: Method of interconnect formation using focused beams
- Patent Title (中): 使用聚焦光束的互连形成方法
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Application No.: US11413476Application Date: 2006-04-28
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Publication No.: US07763552B2Publication Date: 2010-07-27
- Inventor: William M. Tong , Duncan Stewart , R. Stanley Williams , Manish Sharma , Zhiyong Li , Gary A. Gibson
- Applicant: William M. Tong , Duncan Stewart , R. Stanley Williams , Manish Sharma , Zhiyong Li , Gary A. Gibson
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/62

Abstract:
A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a modified region having differing electrical properties than the rest of the interlayer, sandwiched at the junction of the first electrode and the second electrode. The interlayer may be exposed to a focused beam to form the modified region.
Public/Granted literature
- US20070252131A1 Method of interconnect formation using focused beams Public/Granted day:2007-11-01
Information query
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