发明授权
- 专利标题： Manufacturing method of semiconductor device subjected to heat treatment by use of optical heating apparatus
- 专利标题（中）： 使用光学加热装置进行热处理的半导体装置的制造方法
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申请号： US12025916申请日： 2008-02-05
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公开(公告)号： US07763553B2公开(公告)日： 2010-07-27
- 发明人: Takayuki Ito , Kyoichi Suguro
- 申请人： Takayuki Ito , Kyoichi Suguro
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2007-027116 20070206
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An auxiliary heating process is performed to set the temperature of the outer peripheral portion of a semiconductor substrate higher than that of the central portion thereof by use of an auxiliary heating source which supplementally heats a region of an area smaller than the area of the main surface of the semiconductor substrate from the rear surface of the main surface thereof, pulse-like flash lamp light or laser light is applied in the auxiliary heated state and the heat treatment is performed by use of the applied energy. The flash lamp light is applied to the main surface of the semiconductor substrate in a pulse form of 0.1 ms to 100 ms.
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