发明授权
- 专利标题： Doped phase change material and pram including the same
- 专利标题（中）： 掺杂相变材料和婴儿车包括相同
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申请号： US11980431申请日： 2007-10-31
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公开(公告)号： US07763886B2公开(公告)日： 2010-07-27
- 发明人: Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
- 申请人： Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2006-0107929 20061102
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; C01B19/00
摘要：
Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100−(X+Y+Z). The index X of indium (In) is in the range of 25 wt %≦X≦60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %≦Y≦17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %
公开/授权文献
- US20080149908A1 Doped phase change material and pram including the same 公开/授权日：2008-06-26
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