A semiconductor device incorporating a capacitor and a method of fabricating the same include a first inter-layer dielectric film formed on a semiconductor substrate, a first electrode pattern formed on the first inter-layer dielectric film, and a capacitor region self-aligned to the first electrode pattern and in which the first inter-layer dielectric film is etched. An MIM capacitor is conformably formed on the sidewall of the first electrode pattern in the capacitor region. In the capacitor region, a first hollow region is formed enclosed by the MIM capacitor and a second electrode pattern fills the first hollow region. The second electrode pattern has a sidewall opposite to the sidewall of the first electrode pattern. The MIM capacitor is conformably formed in the capacitor region that is deepened more than a thickness of an interconnection layer, so that it has a capacitor area wider than an area contacting with the interconnection layer. Further, the MIM capacitor can be enlarged in area by transforming a planar form of the electrode pattern.