Invention Grant
- Patent Title: Acceleration sensor and method of manufacturing the same
- Patent Title (中): 加速度传感器及其制造方法
-
Application No.: US11892289Application Date: 2007-08-21
-
Publication No.: US07765870B2Publication Date: 2010-08-03
- Inventor: Goro Nakatani
- Applicant: Goro Nakatani
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2006-224433 20060821
- Main IPC: G01P15/12
- IPC: G01P15/12
Abstract:
An acceleration sensor includes a semiconductor element built in a substrate, a wiring layer formed on the substrate, and a piezoresistor, formed on the substrate and made up of a part of the wiring layer, whose resistivity changes by the action of acceleration.
Public/Granted literature
- US20080041157A1 Acceleration sensor and method of manufacturing the same Public/Granted day:2008-02-21
Information query
IPC分类:
