Invention Grant
- Patent Title: Sub-lithographic interconnect patterning using self-assembling polymers
- Patent Title (中): 使用自组装聚合物的亚光刻互连图案
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Application No.: US11627488Application Date: 2007-01-26
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Publication No.: US07767099B2Publication Date: 2010-08-03
- Inventor: Wai-Kin Li , Haining S. Yang
- Applicant: Wai-Kin Li , Haining S. Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporaiton
- Current Assignee: International Business Machines Corporaiton
- Current Assignee Address: US NY Armonk
- Agent Wenjie Li
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/302 ; B82B3/00
Abstract:
The present invention is directed to the formation of sublithographic features in a semiconductor structure using self-assembling polymers. The self-assembling polymers are formed in openings in a hard mask, annealed and then etched, followed by etching of the underlying dielectric material. At least one sublithographic feature is formed according to this method. Also disclosed is an intermediate semiconductor structure in which at least one interconnect wiring feature has a dimension that is defined by a self-assembled block copolymer.
Public/Granted literature
- US20080182402A1 SUB-LITHOGRAPHIC INTERCONNECT PATTERNING USING SELF-ASSEMBLING POLYMERS Public/Granted day:2008-07-31
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