Invention Grant
- Patent Title: Method for repairing errors of patterns embodied in thin layers
- Patent Title (中): 修复薄层图案错误的方法
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Application No.: US10582791Application Date: 2004-12-15
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Publication No.: US07767104B2Publication Date: 2010-08-03
- Inventor: Laurent Pain
- Applicant: Laurent Pain
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0351067 20031216
- International Application: PCT/FR2004/050698 WO 20041215
- International Announcement: WO2005/059651 WO 20050630
- Main IPC: C03C25/68
- IPC: C03C25/68
Abstract:
A fabrication method in thin layers, for example of integrated electronic circuits or MEMS. A correction method allows design errors made for example by photolithography in a thin layer to be repaired, and without necessarily having to utilize a new mask or without having to correct an erroneous mask. A lithography device allows certain of operations of such a method to be employed.
Public/Granted literature
- US20070190241A1 Method for repairing errors of patterns embodied in thin layers Public/Granted day:2007-08-16
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