Invention Grant
- Patent Title: Method of dry etching oxide semiconductor film
- Patent Title (中): 干蚀刻氧化物半导体膜的方法
-
Application No.: US11775561Application Date: 2007-07-10
-
Publication No.: US07767106B2Publication Date: 2010-08-03
- Inventor: Chienliu Chang
- Applicant: Chienliu Chang
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-216857 20060809
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
Public/Granted literature
- US20080038929A1 METHOD OF DRY ETCHING OXIDE SEMICONDUCTOR FILM Public/Granted day:2008-02-14
Information query
