Invention Grant
- Patent Title: Method of fabricating photomask blank
- Patent Title (中): 制造光掩模坯料的方法
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Application No.: US11882729Application Date: 2007-08-03
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Publication No.: US07767368B2Publication Date: 2010-08-03
- Inventor: Noriyasu Fukushima , Hiroki Yoshikawa
- Applicant: Noriyasu Fukushima , Hiroki Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Priority: JP2006-259302 20060925
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
An opaque area is formed in a sidewall portion of a susceptor by stacking a material that is transparent to flash light and a material that is opaque to the flash light to form the sidewall portion or coating a surface of the opaque material with the transparent material. A top surface of the opaque area in the sidewall portion of the susceptor is designed to have a predetermined positional relationship with a top surface of a substrate; the top surface of the opaque area is set at the same position as that of the top surface of the substrate or higher than the top surface of the substrate by a predetermined height. Thus, obliquely incident flash light is absorbed or irregularly reflected by the opaque quartz portion, surrounding an excavated portion of the susceptor.
Public/Granted literature
- US20080076040A1 Method of fabricating photomask blank Public/Granted day:2008-03-27
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