Invention Grant
- Patent Title: Magnetic random access memory and method of manufacturing the same
- Patent Title (中): 磁性随机存取存储器及其制造方法
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Application No.: US12108993Application Date: 2008-04-24
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Publication No.: US07767469B2Publication Date: 2010-08-03
- Inventor: Yoshiaki Asao , Hiroaki Yoda
- Applicant: Yoshiaki Asao , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-266936 20040914
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8222
Abstract:
A magnetic random access memory includes, a lower electrode, a magnetoresistive element which is arranged above the lower electrode and has side surfaces, and a protective film which covers the side surfaces of the magnetoresistive element, has a same planar shape as the lower electrode, and is formed by one of sputtering, plasma CVD, and ALD.
Public/Granted literature
- US20080206895A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-08-28
Information query
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