Invention Grant
US07767470B2 Semiconductor wafers with highly precise edge profile and method for producing them
失效
具有高精度边缘轮廓的半导体晶片及其制造方法
- Patent Title: Semiconductor wafers with highly precise edge profile and method for producing them
- Patent Title (中): 具有高精度边缘轮廓的半导体晶片及其制造方法
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Application No.: US11828441Application Date: 2007-07-26
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Publication No.: US07767470B2Publication Date: 2010-08-03
- Inventor: Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
- Applicant: Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102006037267 20060809
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.
Public/Granted literature
- US20080036040A1 Semiconductor Wafers With Highly Precise Edge Profile And Method For Producing Them Public/Granted day:2008-02-14
Information query
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