Invention Grant
- Patent Title: Formation of contacts on semiconductor substrates
- Patent Title (中): 在半导体衬底上形成接触
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Application No.: US10532118Application Date: 2003-10-23
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Publication No.: US07767487B2Publication Date: 2010-08-03
- Inventor: Kimmo Puhakka , Ian Benson
- Applicant: Kimmo Puhakka , Ian Benson
- Applicant Address: CY Limassol
- Assignee: IPL Intellectual Property Licensing Limited
- Current Assignee: IPL Intellectual Property Licensing Limited
- Current Assignee Address: CY Limassol
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: GB0224689.0 20021023
- International Application: PCT/GB03/04577 WO 20031023
- International Announcement: WO2004/038809 WO 20040506
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/82 ; H01L21/44

Abstract:
Embodiments of the invention are concerned with a method of manufacturing a radiation detector having one or more conductive contacts on a semiconductor substrate, and comprise the steps of: applying a first conductive layer to a first surface of the semiconductor substrate; applying a second conductive layer to form a plurality of contiguous layers of conductive materials, said plurality of contiguous layers including said first conductive layer; and selectively removing parts of said plurality of contiguous layers so as to form said conductive contacts, the conductive contacts defining one or more radiation detector cells in the semiconductor substrate.
Public/Granted literature
- US20070117255A1 Formation of contacts on semiconductor substrates Public/Granted day:2007-05-24
Information query
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