Invention Grant
- Patent Title: Methods of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12584321Application Date: 2009-09-03
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Publication No.: US07767491B2Publication Date: 2010-08-03
- Inventor: Hideki Horii , Jeonghee Park , Youngkuk Kim
- Applicant: Hideki Horii , Jeonghee Park , Youngkuk Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2008-0095936 20080930
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A method of manufacturing a semiconductor device includes forming a phase change material pattern on a top surface of an insulating layer including an opening and in the opening, and forming a compressive layer compressing the phase change material pattern on the phase change material pattern.
Public/Granted literature
- US20100081263A1 Methods of manufacturing semiconductor device Public/Granted day:2010-04-01
Information query
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