Invention Grant
- Patent Title: Method for the fabrication of semiconductor devices including attaching chips to each other with a dielectric material
- Patent Title (中): 用于制造半导体器件的方法，包括用电介质材料彼此连接芯片
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Application No.: US12197602Application Date: 2008-08-25
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Publication No.: US07767495B2Publication Date: 2010-08-03
- Inventor: Edward Fuergut , Joachim Mahler , Carsten von Koblinski , Ivan Nikitin
- Applicant: Edward Fuergut , Joachim Mahler , Carsten von Koblinski , Ivan Nikitin
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/50
Abstract:
A semiconductor device and manufacturing method. One embodiment provides at least two semiconductor chips. A dielectric material is applied to the at least two semiconductor chips to attach the at least two semiconductor chips to each other. A portion of the dielectric material is selectively removed between the at least two semiconductor chips to form at least one recess in the dielectric material. Metal particles including paste is applied to the at least one recess in the dielectric material.
Public/Granted literature
- US20100044885A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2010-02-25
Information query
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